IRF530FP
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE IRF530FP s s s s s s
V DSS 100 V
R DS(on) < 0.16 Ω
ID 10 A s s
TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc)
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (
- ) P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction...
