Datasheet4U Logo Datasheet4U.com

IRF530 - N-Channel Power MOSFET

Key Features

  • 14A, 100V.
  • rDS(ON) = 0.160Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation 1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF530 N-Channel MOSFET Transistor Inchange Semiconductor
IRF530 N-Channel MOSFET Motorola Inc
IRF530 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics
IRF530 Power MOSFET International Rectifier
IRF530 N-Channel MOSFET Harris Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRF530A Advanced Power MOSFET
IRF530N Power MOSFET
IRF531 N-Channel Power MOSFET
IRF532 N-Channel Power MOSFET
IRF533 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.