IRF630S Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S Features - ’Trench’ technology - Low on-state resistance - Fast switching - Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 (D2PAK) surface...