STMicroelectronics IRF630
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.- Channels : 1
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF630 |
|---|---|
| Datasheet | IRF630 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS IRF630 200 V● Extremely high dv/dt capability
● Very low intrinsic capacitance
● Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB)
APPLICATIONS
● Switching applications G(1) S(3) AM01475v1_noZenDESCRIPTION
Product status link IRF630 Product summary Order code IRF630 Marking IRF630 Package TO-220 Packing Tube DS0668 - Rev 10 - December 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDDS Drain-source voltage (VGS = 0 V) VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C EAS(2) Single pulse avalanche energy dv/dt(3) Drain-body diode dynamic dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. Starting TJ = 25 °C, ID = 4.5 A 3.
