Datasheet4U Logo Datasheet4U.com

IRF630 - N-channel MOSFET

General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

Key Features

  • Order code VDS IRF630 200 V.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF630 N-Channel Power MOSFET Fairchild Semiconductor
IRF630 Power MOSFET Vishay
IRF630 N-channel mosfet transistor Inchange Semiconductor
IRF630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
IRF630A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description
IRF630FI N-CHANNEL MOSFET
IRF630FP N-CHANNEL MOSFET
IRF630S N-Channel Power MOSFET
IRF634 N-CHANNEL Power MOSFET
IRF634FP N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630 200 V • Extremely high dv/dt capability • Very low intrinsic capacitance • Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB) Applications • Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.