IRF630NL Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive.

Datasheet Details

Part number	IRF630NL
Manufacturer	International Rectifier (now Infineon)
File Size	240.87 KB
Description	Power MOSFET
Datasheet	IRF630NL_InternationalRectifier.pdf

General Description

l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Key Features

IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (.0 1 4) 2 .92 (.11 5 ) 2 .64 (.10 4 ) 1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LING D IM E N S IO N : INC H 3 O UTL IN E C O NF O R M S TO J E DE.

IRF630NL Distributor

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