Description
Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- IN 1 2 3
L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN
14 .09 (.5 55 ) 13 .47 (.5 30 )
4 .0 6 (.16 0 ) 3 .5 5 (.14 0 )
3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S :
0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M
3X
0.5 5 (.0 22) 0.4 6 (.0 18)
0 .3 6 (.0 1 4)
2 .92 (.11 5 ) 2 .64 (.10 4 )
1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LING D IM E N S IO N : INC H
3 O UTL IN E C O NF O R M S TO J E DE.
IRF630N Datasheet
