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IRF630F Datasheet PDF

Inchange Semiconductor IRF630F

N-Channel MOSFET Transistor

Part No. IRF630F
Datasheet IRF630F Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF630F datasheet page 1 preview

FEATURES

123 With TO-220F package ¤¡ Low on-stateand thermal resistance ¤¡ Fast switching ¤¡ VDSS=200V; RDS(ON)¡Ü 0.4¦¸ ;ID=9A ¤¡ 1.gate 2.drain 3.source ‹

ABSOLUTE MAXIMUM RATINGS

Tc=25¡æ SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25¡æ Total Dissipation@TC=25¡æ Operating Junction temperature Storage temperature ¡À RATING 200 20 9 35 150 -65~150 ¡æ ¡æ UNIT V V A W TO-220F ‹

ELECTRICAL CHARACTERISTICS

Tc=25¡æ SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VGS=0; ID=0.25mA VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=¡À 20V;VDS=0 200 2 4 400 ¡À 100 V V m¦¸ nA uA V VDS=200V; VGS=0 IF=9A; VGS=0 10 1.2