Datasheet Details
| Part number | IRF630N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.39 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRF630N-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IRF630N，IIRF630N ·.
| Part number | IRF630N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.39 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRF630N-INCHANGE.pdf |
|
|
|
· Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipation @TC=25℃ 82 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.83 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF630N | Power MOSFET | International Rectifier |
|
IRF630NL | Power MOSFET | International Rectifier |
|
IRF630NLPBF | Power MOSFET | International Rectifier |
|
IRF630NPBF | Power MOSFET | International Rectifier |
|
IRF630NS | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRF630NL | N-Channel MOSFET |
| IRF630NS | N-Channel MOSFET |
| IRF630NSTRRPBF | N-Channel MOSFET |
| IRF630F | N-Channel MOSFET Transistor |
| IRF60B217 | N-Channel MOSFET |
| IRF60R217 | N-Channel MOSFET |
| IRF6218 | P-Channel MOSFET |
| IRF6218S | P-Channel MOSFET |
| IRF640N | N-Channel MOSFET |
| IRF640NL | N-Channel MOSFET |