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IRF630N - N-Channel MOSFET

General Description

Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipati

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤0.3Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IRF630N，IIRF630N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipation @TC=25℃ 82 Tj Max.