Datasheet Summary
isc N-Channel MOSFET Transistor
IRF630N，IIRF630N
- Features
- Static drain-source on-resistance:
RDS(on) ≤0.3Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRIPTION
- Efficient and reliable device for use in a wide variety of applications
-...
