IRF630N Datasheet (PDF) Download
Inchange Semiconductor
IRF630N

Description

Efficient and reliable device for use in a wide variety of applications.

Key Features

  • Static drain-source on-resistance: RDS(on) ≤0.3Ω
  • Enhancement mode
  • Fast Switching Speed
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation