IRF630NSTRRPBF
DESCRIPTION
- Drain Current
- ID=9.3A@ TC=25℃
- Drain Source Voltage-
: VDSS= 200V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
- Fast Switching Speed
- Low Drive Requirement
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.83 ℃/W
Rth j-a Thermal Resistance,Junction to...
