IRF630NL
FEATURES
- With TO-262 packaging
- High speed switching
- Low gate input resistance
- Standard level gate drive
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Power supply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
Gate-Source Voltage
±20
Drain Current-Continuous
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
MAX 1.83
UNIT ℃/W
IRF630NL isc website：.iscsemi.cn
1 isc & iscsemi is registered...
