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IRF631 - N-Channel Mosfet Transistor

Key Features

  • RDS(on) =0.4Ω.
  • 9A and 150V.
  • single pulse avalanche energy rated.
  • SOA is Power- Dissipation Limited.
  • Linear Transfer Characteristics.
  • High Input Impedance isc Product Specification IRF631.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·9A and 150V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF631 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 ±20 V V ID Drain Current-Continuous 9A IDM Drain Current-Single Plused 36 A PD Total Dissipation @TC=25℃ 75 W Tj Max.