Datasheet4U Logo Datasheet4U.com

IRF630A - N-Channel MOSFET Transistor

General Description

Drain Current ID=9A@ TC=25℃ Drain Source Voltage: VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed especially for hi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF630A Advanced Power MOSFET Fairchild Semiconductor
IRF630 N-channel MOSFET STMicroelectronics
IRF630 N-Channel Power MOSFET Fairchild Semiconductor
IRF630 Power MOSFET Vishay
IRF630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF630 N-channel mosfet transistor
IRF630FI N-Channel Mosfet Transistor
IRF631 N-Channel Mosfet Transistor
IRF633 N-Channel Mosfet Transistor
IRF634 N-channel mosfet transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID Ptot Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range w ww s c s .