IRF630A Overview
Key Specifications
Description
Drain Current –ID=9A@ TC=25℃ - Drain Source Voltage: VDSS= 200V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) - Fast Switching Speed - Low Drive Requirement APPLICATIONS - This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. SYMBOL VDSS VGS ID Ptot Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max.
