IRF630A Datasheet
IRF630A Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is .
tion to Ambient
isc Website：
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
*ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain.
IRF630A Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 2 3 IRF630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 9 A TO-220 1.Gate 2. Drain 3. Source A.