IRF630S - N-Channel Power MOSFET

STMicroelectronics

General Description

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

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IRF630S n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	IRF630S
Manufacturer	STMicroelectronics
File Size	85.23 KB
Description	N-Channel Power MOSFET
Datasheet	IRF630S Datasheet

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Other Datasheets by STMicroelectronics

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IRF630	N-channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® IRF630S N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET TYPE IRF630S s s s s s s V DSS 200 V R DS(on) < 0.40 Ω ID 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.