IRF630S Datasheet and Specifications PDF

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface .

* Halogen-free According to IEC 61249-2-21 Definition
* Surface Mount
* Available in Tape and Reel
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFET.

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various.

) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 200 200 ± 20 9 5.7 36 70 0.56 5 -65 to 150 150 ( 1) ISD ≤ 9A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un i.

SMD Type N-Channel MOSFET IRF630S (KRF630S) MOSFET ■ Features ● VDS (V) = 200V ● ID = 9 A (VGS = 10V) ● RDS(ON) ＜ 400mΩ (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maxi.

* VDS (V) = 200V
* ID = 9 A (VGS = 10V)
* RDS(ON) ＜ 400mΩ (VGS = 10V)
* Fast switching
* Low thermal resistance d g s
* Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Peak Non-Repetitive Aval.

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. con.

* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line s.