IRF633
Key Features
- RDS(on) =0.6Ω
- single pulse avalanche energy rated
- SOA is Power- Dissipation Limited
- Linear Transfer Characteristics
- High Input Impedance isc Product Specification IRF633
- Part: IRF633
- Description: N-Channel Mosfet Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 39.11 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF633 | GE | FIELD EFFECT POWER TRANSISTOR |
| IRF630PBF | Thinki Semiconductor | N-Channel Type Power MOSFET |
| IRF634B | Fairchild Semiconductor | N-Channel BFET MOSFET |
| IRF630MFP | STMicroelectronics | N-Channel Power MOSFET |
| IRF630NSPBF | International Rectifier | Power MOSFET |
| IRF634NLPbF | International Rectifier | HEXFET Power MOSFET |
| IRF634A | Samsung Semiconductor | Advanced Power MOSFET |
| IRF634S | Vishay | Power MOSFET |
| IRF632 | GE | FIELD EFFECT POWER TRANSISTOR |
| IRF630 | Advanced Power Electronics Corp | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |