Drain Current -ID=6.5A@ TC=25℃ - Drain Source Voltage- : VDSS= 275V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.68Ω(Max) - Nanosecond Switching Speed - High Input Impedance.
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF630PBF | Thinki Semiconductor | N-Channel Type Power MOSFET |
| IRF634B | Fairchild Semiconductor | N-Channel BFET MOSFET |
| IRF630MFP | STMicroelectronics | N-Channel Power MOSFET |
| IRF630NSPBF | International Rectifier | Power MOSFET |
| IRF634A | Samsung Semiconductor | Advanced Power MOSFET |
| IRF634S | Vishay | Power MOSFET |
| IRF634A | ART CHIP | Advanced Power MOSFET |
| IRF632 | GE | FIELD EFFECT POWER TRANSISTOR |
| IRF634NLPbF | International Rectifier | HEXFET Power MOSFET |
| IRF630 | Advanced Power Electronics Corp | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
