Datasheet Details
| Part number | IRF630NS |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 240.87 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF630NS Datasheet
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General Description
Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (.0 1 4) 2 .92 (.11 5 ) 2 .64 (.10 4 ) 1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LING D IM E N S IO N : INC H 3 O UTL IN E C O NF O R M S TO J E DE.