IRF630 Datasheet and Specifications PDF

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This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary swi.

Order code VDS IRF630 200 V
* Extremely high dv/dt capability
* Very low intrinsic capacitance
* Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB) Applications
* Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series realized with STMicroelectronics.

MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute.

With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipatio.

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFE.

* 9A, 200V
* rDS(ON) = 0.400Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S.