IRF640NLPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides th.
IRF640NLPBF Features
* ition indicates "Lead - Free"
INT ERNAT IONAL RECT IFIER LOGO
AS S EMBLY LOT CODE
PART NUMBER
DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C
TO-220AB package is not recommended for Surface Mount Application
Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-i