IRF640NSPBF
International Rectifier
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Power mosfet.
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IRF640NS - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
IRF640NS - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.
IRF640N - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
IRF640N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF640N,IIRF640N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee.
IRF640NL - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
IRF640NL - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
IRF640NLPBF - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
IRF640NPBF - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
IRF640 - N-channel TrenchMOS transistor
(NXP)
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
FEATURES
• ’Trench’ technology • Low on-state resista.
IRF640 - N-Channel MOSFET
(STMicroelectronics)
®
IRF640 IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET
TYPE IRF640 IRF640FP
s s s s
V DSS 200 V 200 V
R DS(on) < 0.