IRF640NS Datasheet - International Rectifier

IRF640NS, Power MOSFET

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per.

Features

* 1.22 (.048) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFE1T- GATE IGBTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power

IRF640NS_InternationalRectifier.pdf