Datasheet4U Logo Datasheet4U.com

IRF640NS

Power MOSFET

IRF640NS Features

* 1.22 (.048) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFE1T- GATE IGBTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (

IRF640NS General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides.

IRF640NS Datasheet (236.22 KB)

Preview of IRF640NS PDF

Datasheet Details

Part number:

IRF640NS

Manufacturer:

International Rectifier

File Size:

236.22 KB

Description:

Power mosfet.
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

📁 Related Datasheet

IRF640N Power MOSFET (International Rectifier)

IRF640N N-Channel MOSFET (INCHANGE)

IRF640NL Power MOSFET (International Rectifier)

IRF640NL N-Channel MOSFET (INCHANGE)

IRF640NLPBF Power MOSFET (International Rectifier)

IRF640NPBF Power MOSFET (International Rectifier)

IRF640NS N-Channel MOSFET (INCHANGE)

IRF640NSPBF Power MOSFET (International Rectifier)

IRF640 N-channel TrenchMOS transistor (NXP)

IRF640 N-Channel MOSFET (STMicroelectronics)

TAGS

IRF640NS Power MOSFET International Rectifier

Image Gallery

IRF640NS Datasheet Preview Page 2 IRF640NS Datasheet Preview Page 3

IRF640NS Distributor