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IRF640L Power MOSFET

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Description

PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S.
Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, lo.

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Features

* ishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www. i

Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640L) is available for low-profile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°

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