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IRF640 Power MOSFET

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Description

www.vishay.com IRF640 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number
IRF640
Manufacturer
Vishay ↗
File Size
128.06 KB
Datasheet
IRF640-Vishay.pdf
Description
Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Available No

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF640PbF IRF640PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-sou

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