IRF640 Datasheet - Fairchild Semiconductor

IRF640 200V N-Channel MOSFET

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bi.

IRF640 Features

* 18A, 200V

* rDS(ON) = 0.180Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speed

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S

IRF640_FairchildSemiconductor.pdf

IRF640 Datasheet Preview — Preview of IRF640 PDF

Datasheet Details

Part number:

IRF640

Manufacturer:

Fairchild Semiconductor

File Size:

132.20 KB

Description:

200v n-channel mosfet.

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IRF640 IRF640 200V N-Channel MOSFET Fairchild Semiconductor

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