Datasheet4U Logo Datasheet4U.com

IRF6218S - P-Channel MOSFET

IRF6218S Description

isc P-Channel MOSFET Transistor *.

IRF6218S Features

* Static drain-source on-resistance: RDS(on)≤150mΩ(@VGS= -10V; ID= -16A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF6218S Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -27 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Te

📥 Download Datasheet

Preview of IRF6218S PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF6218S
Manufacturer
INCHANGE
File Size
248.44 KB
Datasheet
IRF6218S-INCHANGE.pdf
Description
P-Channel MOSFET

📁 Related Datasheet

  • IRF6218SPbF - Power MOSFET (Infineon)
  • IRF6218 - SMPS MOSFET (International Rectifier)
  • IRF6218L - Power MOSFET (International Rectifier)
  • IRF6218PBF - HEXFET Power MOSFET (International Rectifier)
  • IRF621 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF6215 - HEXFET Power MOSFET (International Rectifier)
  • IRF6215L - (IRF6215L/S) HEXFET Power MOSFET (International Rectifier)
  • IRF6215LPBF - Power MOSFET (International Rectifier)

📌 All Tags

P-Channel MOSFET INCHANGE
INCHANGE IRF6218S-like datasheet