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IRF630N

N-Channel MOSFET

IRF630N Features

* Static drain-source on-resistance: RDS(on) ≤0.3Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Efficient and reliable device for use in a wide variety of

IRF630N General Description


* Efficient and reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipati.

IRF630N Datasheet (241.39 KB)

Preview of IRF630N PDF

Datasheet Details

Part number:

IRF630N

Manufacturer:

INCHANGE

File Size:

241.39 KB

Description:

N-channel mosfet.

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TAGS

IRF630N N-Channel MOSFET INCHANGE

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