IRF630N N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IRF630N，IIRF630N *.
Efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS.

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Datasheet Specifications

Part number: IRF630N
Manufacturer: INCHANGE
File Size: 241.39 KB
Datasheet: IRF630N-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.3Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipation @TC=25℃ 82 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

IRF630N Distributors

📁 Related Datasheet

IRF630NL IRF630NLPBF IRF630NPBF IRF630NS IRF630NSPBF IRF630

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IRF630N N-Channel MOSFET INCHANGE

INCHANGE IRF630N-like datasheet