Datasheet4U Logo Datasheet4U.com

IRF60R217 - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤9.9mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRF60R217

Datasheet Details

Part number IRF60R217
Manufacturer INCHANGE
File Size 238.31 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF60R217 Datasheet
Additional preview pages of the IRF60R217 datasheet.

📁 Similar Datasheet

  • IRF60R217 - IR MOSFET (Infineon)
  • IRF60B217 - IR MOSFET (Infineon)
  • IRF60DM206 - N-Channel Power MOSFET (International Rectifier)
  • IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF610 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF610 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF610 - Power MOSFET (Vishay)
  • IRF6100 - HEXFET Power MOSFET (International Rectifier)
  • IRF6100PBF - HEXFET Power MOSFET (International Rectifier)
  • IRF610A - N-Channel Mosfet Transistor (Inchange Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 217 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
Published: |