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IRF60R217 - N-Channel MOSFET

IRF60R217 Description

isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 *.

IRF60R217 Features

* Static drain-source on-resistance: RDS(on)≤9.9mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF60R217 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 217 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRF60R217
Manufacturer
INCHANGE
File Size
238.31 KB
Datasheet
IRF60R217-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF60R217-like datasheet