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IRF610A

Advanced Power MOSFET

IRF610A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source

IRF610A Datasheet (279.10 KB)

Preview of IRF610A PDF

Datasheet Details

Part number:

IRF610A

Manufacturer:

Fairchild Semiconductor

File Size:

279.10 KB

Description:

Advanced power mosfet.

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TAGS

IRF610A Advanced Power MOSFET Fairchild Semiconductor

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