IRF620 Datasheet (Fairchild Semiconductor)

IRF620, N-Channel Power MOSFET

Data Sheet January 2002 IRF620 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors r

IRF620 Features

* 5.0A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for