IRF620 N-Channel Power MOSFET

Fairchild Semiconductor

Description

Data Sheet January 2002 IRF620 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transi.

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Datasheet Specifications

Part number: IRF620
Manufacturer: Fairchild Semiconductor
File Size: 114.41 KB
Datasheet: IRF620_FairchildSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* 5.0A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9600. Ordering Infor

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IRF620 N-Channel Power MOSFET Fairchild Semiconductor

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