IRF624B 250V N-Channel MOSFET

Fairchild Semiconductor

Description

IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRF624B
Manufacturer: Fairchild Semiconductor
File Size: 874.76 KB
Datasheet: IRF624B_FairchildSemiconductor.pdf
Description: 250V N-Channel MOSFET

Features

* 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximu

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IRF624B 250V N-Channel MOSFET Fairchild Semiconductor

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