IRF614S Datasheet - Fairchild Semiconductor

IRF614S Power MOSFET

IRF614S Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 10µA (Max.) @ VDS = 250V

* Lower RDS(ON): 1.393Ω (Typ.) Absolute Maximum Rati

Datasheet Details

IRF614S

Fairchild Semiconductor

230.20 KB

Power mosfet.

IRF614S Distributor

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IRF614S IRF614S Power MOSFET Fairchild Semiconductor