12M2H008 Datasheet - Infineon

12M2H008 1200V SiC MOSFET

12M2H008 Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 144 A at TC = 100°C

* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage

Datasheet Details

12M2H008

1.25 MB

1200v sic mosfet.

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12M2H008 1200V SiC MOSFET Infineon

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