12M2H008 Datasheet, Mosfet, Infineon

✔ 12M2H008 Features

VDSS = 1200 V at Tvj = 25°C
IDDC = 144 A at TC = 100°C
RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
Very low switching losses
Overload operation up to Tvj = 200

✔ 12M2H008 Application

EV Charging
Online UPS/Industrial UPS
String inverter
General purpose drives (GPD) Product validati

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Part number:

12M2H008

Manufacturer:

Infineon ↗

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1.25MB

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📄 Datasheet

Description:

1200v sic mosfet. Pin definition: * Pin 1 - Gate * Pin 2 - Kelvin sense contact * Pin 3…7 - Source * Tab - Drain Note: the source and sense pins are no

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12M2H008 1200V SiC MOSFET Infineon