12M1H060 - 1200V SiC Trench MOSFET

Infineon

Datasheet Details

Very low switching losses.
Threshold-free on state characteristic.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses.
Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
Efficiency improvement.
Enabling higher frequency.

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