12M1H060 Datasheet - Infineon

12M1H060 1200V SiC Trench MOSFET

12M1H060 Features

* Very low switching losses

* Threshold-free on state characteristic

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* 0V turn-off gate voltage for easy and simple gate drive

* Fully controllable dV/dt

* Robust body diode for hard commutation

* Temperature independent

Datasheet Details

12M1H060

1.20 MB

1200v sic trench mosfet.

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