12M1H060
1.20MB
1200v sic trench mosfet.
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12M2H008 - 1200V SiC MOSFET
(Infineon)
IMBG120R008M2H
CoolSiC™ 1200 V SiC MOSFET G2
Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET
Features
• VDSS = 1200 V at Tvj.
12MBI100VN-120-50 - IGBT Module
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Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.
12MBI100VN-120-50 - Power Devices (IGBT)
(ETC)
6
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6th Gen. IGBT Module V-series
A pact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17.
12MBI100VX-120-50 - IGBT Module
(fuji electric)
IGBT Module Series for Advanced-NPC Circuits
Kosuke Komatsu † Takahito Harada † Yoshiyuki Kusunoki †
ABSTRACT A series of insulated gate bipolar trans.
12MBI100VX-120-50 - IGBT Module
(Fuji Electric)
IGBT Module series for AT-NPC 3-level 12-in-1
Features
Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.
12MBI100VX-120-50 - Power Devices (IGBT)
(ETC)
6
IGBT
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6th Gen. IGBT Module V-series
A pact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17.
12MBI50VN-120-50 - IGBT Module
(Fuji Electric)
IGBT Module series for AT-NPC 3-level 12-in-1
Features
Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.
12MBI50VN-120-50 - Power Devices (IGBT)
(ETC)
6
IGBT
V
6th Gen. IGBT Module V-series
A pact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17.
12MBI50VX-120-50 - IGBT Module
(Fuji Electric)
IGBT Module series for AT-NPC 3-level 12-in-1
Features
Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.