12M1H060 - 1200V SiC Trench MOSFET
12M1H060 Features
* Very low switching losses
* Threshold-free on state characteristic
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body diode for hard commutation
* Temperature independent
