1200V Datasheet | Specifications & PDF Download

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Fairchild Semiconductor

FGA15N120ANTD - 1200V NPT Trench IGBT

www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem.
Rating: 2 ★★ (58 votes)
Fairchild Semiconductor

FGL40N120AND - 1200V NPT IGBT

FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6.
Rating: 1 (42 votes)
Thinki Semiconductor

70HF120 - 70A/1200V Metal Stud Type Rectifier Diodes

70HF120/70HFR120 70HF120/70HFR120 Pb Pb Free Plating Product 70A/1200V Metal Stud Type Rectifier Diodes Unit:mm(inch) DO-203AB (DO-5) POLARITY .
Rating: 1 (19 votes)
Infineon

120M1045 - 1200V SiC Trench MOSFET

IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha.
Rating: 1 (19 votes)
ON Semiconductor

NFVA22512NP2T - Automotive 3-Phase 1200V 25A IGBT

DATA SHEET www.onsemi.com ASPM34 Series Automotive 3-Phase 1200 V 25 A IGBT Intelligent Power Module NFVA22512NP2T General Description NFVA22512NP2T.
Rating: 1 (16 votes)
Fairchild Semiconductor

FGL40N120AN - 1200V NPT IGBT

FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @.
Rating: 1 (15 votes)
Infineon

IMW120R045M1 - 1200V SiC Trench MOSFET

IMW120R045M1 IMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha.
Rating: 1 (14 votes)
Fairchild Semiconductor

RHRG30120 - 30A 1200V Hyperfast Diode

RHRG30120 Data Sheet January 2002 30A, 1200V Hyperfast Diode The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr < 65ns). It h.
Rating: 1 (13 votes)
Fairchild Semiconductor

RHRP8120 - 8A/ 1200V Hyperfast Diode

RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has.
Rating: 1 (13 votes)
LSIS

LUH100G1201 - 1200V 100A 2-Pack IGBT Module

LUH100G1201 LUH100G1201Z*(1) Features • Soft Punch Through - Low Loss (SPT+) Technology SUSPM™ 1200V 100A 2-Pack IGBT Module Preliminary data • • •.
Rating: 1 (12 votes)
UnitedSiC

UJ2D1210T - 1200V SiC Schottky Diode

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Rating: 1 (12 votes)
Intersil Corporation

HGTD2N120CNS - 13A/ 1200V/ NPT Series N-Channel IGBT

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120.
Rating: 1 (11 votes)
Fuji Electric

6MBI8L-120 - IGBT(1200V 8A)

For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com .
Rating: 1 (11 votes)
Fairchild Semiconductor

RHRP30120 - 30A/ 1200V Hyperfast Diode

Data Sheet 30 A, 1200 V, Hyperfast Diode The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultr.
Rating: 1 (11 votes)
Fuji Electric

2MBI1200VT-170E - IGBT

http://www.fujielectric.com/products/semiconductor/ 2MBI1200VT-170E IGBT MODULE (V series) 1700V / 1200A / 2 in one package Features High speed swi.
Rating: 1 (11 votes)
Silan Microelectronics

SGM75HF12A1TFD - 1200V IGBT MODULE

Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the optimum performance for UPS, AC .
Rating: 1 (11 votes)
ON Semiconductor

NFVA25012NP2T - Automotive 3-Phase 1200V 50A IGBT

DATA SHEET www.onsemi.com ASPM34 Series Automotive 3-Phase 1200 V 50 A IGBT Intelligent Power Module NFVA25012NP2T General Description NFVA25012NP2T.
Rating: 1 (11 votes)
Infineon

IMBG120R053M2H - 1200V SiC MOSFET

IMBG120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
Rating: 1 (11 votes)
Infineon

IMBG120R078M2H - 1200V SiC MOSFET

IMBG120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
Rating: 1 (11 votes)
Thinki Semiconductor

RHRG30120 - 1200Volt SwitchMode Single Fast Recovery Epitaxial Diode

RHRG30120 ® RHRG30120 Pb Pb Free Plating Product 30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, .
Rating: 1 (11 votes)
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