.
Fairchild Semiconductor
FGL40N120AND - 1200V NPT IGBT
FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6.
Fairchild Semiconductor
FGA15N120ANTD - 1200V NPT Trench IGBT
www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem.
Fuji Electric
6MBI50S-120L - IGBT(1200V/6x50A)
6MBI 50S-120L IGBT MODULE ( S-Series ) n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Cap.
Infineon
120M1045 - 1200V SiC Trench MOSFET
IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Threshold-free on state cha.
ROHM
BM60210FV-C - 1200V High Voltage High & Low-side / Gate Driver
Datasheet 1200V High Voltage High & Low-side, Gate Driver BM60210FV-C General Description The BM60210FV-C is a monolithic high and low side gate dr.
Fuji Electric
6MBI50S-120 - IGBT(1200V/50A)
6MBI50S-120 IGBT MODULE ( S series) 1200V / 50A 6 in one-package Features · Compact package · P.C.board mount · Low VCE(sat) IGBT Modules Applicatio.
Fairchild Semiconductor
RHRP8120 - 8A/ 1200V Hyperfast Diode
RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has.
Intersil Corporation
RHRP8120 - 8A/ 1200V Hyperfast Diode
RHRP8120 Data Sheet January 2000 File Number 3660.2 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (.
Intersil Corporation
RHRP8120CC - 8A/ 1200V Hyperfast Dual Diode
RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode The RHRP8120CC is a hyperfast dual diode with soft recovery char.
Fuji
2MBI300N-120 - 1200V 300A 2-Pack IGBT
IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I.
Thinki Semiconductor
70HF120 - 70A/1200V Metal Stud Type Rectifier Diodes
70HF120/70HFR120 70HF120/70HFR120 Pb Pb Free Plating Product 70A/1200V Metal Stud Type Rectifier Diodes Unit:mm(inch) DO-203AB (DO-5) POLARITY .
Wolfspeed
C3M0040120K - 1200V 40mohm Silicon Carbide Power MOSFET
C3M0040120K 1200V 40mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain Features Drain (Pin 1, TAB) • 3rd generation SiC MOSF.
AST
ASC60N1200MT3 - 1200V N-Channel MOSFET
V X / Mob:15919711751 ASC60N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide su.
AST
ASC800N1200MED - 1200V SiC MOSFET
V X / Mob:15919711751 ASC800N1200MED 1200V SiC MOSFET Module Features • High Temperature, Humidity, and Bias Operation • Ultra Low Loss • High-Frequ.
AST
ASC30N1200MT3 - 1200V N-Channel MOSFET
Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su.
AST
ASC100N1200MT3 - 1200V N-Channel MOSFET
V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s.
Fuji Electric
6MBI75S-120 - IGBT(1200V/75A)
6MBI75S-120 IGBT MODULE ( S series) 1200V / 75A 6 in one-package Features · Compact package · P.C.board mount · Low VCE(sat) IGBT Modules Applicatio.
Fairchild Semiconductor
RHRP30120 - 30A/ 1200V Hyperfast Diode
Data Sheet 30 A, 1200 V, Hyperfast Diode The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultr.
IXYS
IX2120 - 1200V High and Low Side Gate Driver
INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- (Source/Sink) VOUT ton/toff Rating 1200 2/2 15-20 250/210 Units V A V.
