1200V Datasheet | Pinout, Features, Price Comparison & PDF

LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

HD60SB60 thru HD60SB120 60A,600V-1200V 60A,600V-1200V Single Phase Glass Passivated Bridge Rectifier ■ Features  Glass passivated chip  Low reve

< HVIC > M81748FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81748FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge

KWNFP75R12NS3 1200V 75A PIM IGBT NTC ， (VCE=2.0V) (Eoff=5.1mJ) (>10us) IGBT()（，T C=25℃） - V CES 1200 - V GES ±20 IC T C=25℃ T C

UNISONIC TECHNOLOGIES CO., LTD UTG25N120-G2 Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG25N120-G2

IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

Data Sheet XNS25N120T 1200V/25A IGBT  /PRODUCT FEATURES  + Advanced Trench+FS IGBT technology  Low Collector-Emitter Saturation voltage  With

1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

70HF120/70HFR120 70HF120/70HFR120 Pb Pb Free Plating Product 70A/1200V Metal Stud Type Rectifier Diodes Unit:mm(inch) DO-203AB (DO-5) POLARITY

Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the optimum performance for UPS, AC

XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 – June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3 XTR1K1210

SGM15PA12A5TFD Datasheet 15A, 1200V IGBT MODULE 1.DESCRIPTION SGM15PA12A5TFD Module offers the optimum performance for Auxiliary Inverters, Air Condit

HD60SB60 thru HD60SB120 60A,600V-1200V 60A,600V-1200V Single Phase Glass Passivated Bridge Rectifier ■ Features  Glass passivated chip  Low reve

MITSUBISHI SEMICONDUCTORS M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driv

UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is a

IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s