1200V Datasheet | Specifications & PDF Download

IMCQ120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj =

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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Ta

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www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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70HF120/70HFR120 70HF120/70HFR120 Pb Pb Free Plating Product 70A/1200V Metal Stud Type Rectifier Diodes Unit:mm(inch) DO-203AB (DO-5) POLARITY

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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AIMZH120R040M1T CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET Features PG-TO247-4-STD-NT6.7 • VDSS = 1200 V

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RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has

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1200V XPTTM Gen 4 IGBT IXYX110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = 1200V I = 110A C110 V  2.10V CE(sat) t

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AIMCQ120R040M1T CoolSiC™ Automotive MOSFET 1200 V Final datasheet CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package Features • VDSS = 1200 V at

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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IMBG120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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Datasheet V2021.A.0 G5S12030PPM 1200V/30A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recove

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HAS530M12BM3, 5 HAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Housin

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AIMCQ120R080M1T CoolSiC™ Automotive MOSFET 1200 V Final datasheet CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package Features • VDSS = 1200 V at

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AIMCQ120R160M1T CoolSiC™ Automotive MOSFET 1200 V Final datasheet CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package Features • VDSS = 1200 V at

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AIMCQ120R060M1T CoolSiC™ Automotive MOSFET 1200 V Final datasheet CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package Features • VDSS = 1200 V at

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RHRG15120CC Data Sheet January 2000 File Number 3686.2 15A, 1200V Hyperfast Dual Diode The RHRG15120CC is a hyperfast dual diode with soft recovery c

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