LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

HD60SB60 thru HD60SB120 60A,600V-1200V 60A,600V-1200V Single Phase Glass Passivated Bridge Rectifier ■ Features  Glass passivated chip  Low reve

1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

SGM15PA12A5TFD Datasheet 15A, 1200V IGBT MODULE 1.DESCRIPTION SGM15PA12A5TFD Module offers the optimum performance for Auxiliary Inverters, Air Condit

S3M0025120D Technical Data Data Sheet N2816, REV.- S3M0025120D 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 77 A RDS(on) = 25 mΩ Circuit Diagram

V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s

Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the optimum performance for UPS, AC

NCE75ED120BT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop)

S4D30120H2 Technical Data Data Sheet N2480, REV.- S4D30120H2 1200V SIC POWER SCHOTTKY RECTIFIER TO-247AC(TO-247-2) Description S4D30120H2 is a SiC

70HF120/70HFR120 70HF120/70HFR120 Pb Pb Free Plating Product 70A/1200V Metal Stud Type Rectifier Diodes Unit:mm(inch) DO-203AB (DO-5) POLARITY

< HVIC > M81748FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81748FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge

S3M0040120B Technical Data Data Sheet N2841, REV.- S3M0040120B 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 57 A RDS(on) = 40 mΩ Circuit Diagram

IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

KWSFH50R12F4BM 1200V 50A IGBT IGBT ， 100% RBSOA（2*IC） （VCE=2.2V） (Eoff=1.3mJ) ，RoHS IGBT()（，T j=25℃） - V CES - V GES IC T C=25℃ T C=

S3M0025120B Technical Data Data Sheet N2840, REV.- S3M0025120B 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 73 A RDS(on) = 25 mΩ Circuit Diagram

TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

KWNFP75R12NS3 1200V 75A PIM IGBT NTC ， (VCE=2.0V) (Eoff=5.1mJ) (>10us) IGBT()（，T C=25℃） - V CES 1200 - V GES ±20 IC T C=25℃ T C