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1200V

1200V DataSheet

Infineon

IDK05G120C5 - 1200V Schottky Diode

 · 18 Hits  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching be...
Fuji

2MBI75N-120 - IGBT(1200V 75A)

 · 15 Hits • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurre...
UTC

UDF015N120 - 1200V N-CHANNEL DEPLETION-MODE POWER MOSFET

 · 14 Hits * RDS(ON) ≤ 500 Ω @ VGS=0V, ID=75mA * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free U...
Fairchild Semiconductor

HGTD1N120BNS - 5.3A/ 1200V/ NPT Series N-Channel IGBT

 · 12 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor....
Fairchild Semiconductor

RHRP30120 - 30A/ 1200V Hyperfast Diode

 · 11 Hits • Hyperfast Recovery trr = 85 ns (@ IF = 30 A) • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalan...
Infineon

IMBG120R053M2H - 1200V SiC MOSFET

 · 11 Hits • VDSS = 1200 V at Tvj = 25°C • IDDC = 29 A at TC = 100°C • RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload opera...
Infineon

IMBG120R078M2H - 1200V SiC MOSFET

 · 11 Hits • VDSS = 1200 V at Tvj = 25°C • IDDC = 21 A at TC = 100°C • RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload opera...
Intersil Corporation

RURP30120 - 30A/ 1200V Ultrafast Diode

 · 10 Hits • Ultrafast with Soft Recovery. . . . . . . <110ns • Operating Temperature.. . . . . . . . . . .175oC • ...
Fairchild Semiconductor

FGA15N120ANTD - 1200V NPT Trench IGBT

 · 10 Hits • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss...
Infineon

120M1045 - 1200V SiC Trench MOSFET

 · 10 Hits  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4....
Infineon

IMBG120R045M1H - 1200V SiC Trench MOSFET

 · 10 Hits • Very low switching losses • Short circuit withstand time 3 µs • Fully controllable dV/dt • Benchmark gate threshold voltage, VGS(th) = 4.5V • Robust...
Infineon

IMBG120R012M2H - 1200V SiC MOSFET

 · 10 Hits • VDSS = 1200 V at Tvj = 25°C • IDDC = 102 A at TC = 100°C • RDS(on) = 12.2 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload oper...
Infineon

IMBG120R026M2H - 1200V SiC MOSFET

 · 10 Hits • VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload opera...
MacMic

SKM200GAH123DKL - 1200V 200A CHOPPER Module

 · 9 Hits □ Ultra Low Loss □ High Ruggedness □ High Short Circuit Capability □ VCE(sat) With Positive Temperature Coefficient □ With Fast Free-Wheeling Diodes A...
Infineon

12M1H060 - 1200V SiC Trench MOSFET

 · 9 Hits  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for...
UTC

UTG50N120-S - 1200V TRENCH GATE FIELD-STOP IGBT

 · 9 Hits * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.45V @ IC=50A, VGE=15V (TC =25°C)  SYMBOL  ORDERING INF...
Thinki Semiconductor

STTH3012W - 1200Volt SwitchMode Single Fast Recovery Epitaxial Diode

 · 9 Hits · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Curr...
UTC

2N120-E4 - 1200V N-CHANNEL POWER MOSFET

 · 9 Hits * RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capa...
MagnaChip

MBW100T120PHF - 1200V Field stop High Ruggedness version IGBT

 · 9 Hits Applications G  1200V Trench + Field stop technology  High power & High Ruggedness drives  Low switching losses  Motor driver  Positive te...
Intersil Corporation

HGT1S5N120BNDS - 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

 · 8 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
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