1200V Datasheet | Specifications & PDF Download

1P2o0w0eVr IMGoBdTulEeD3 ADP600B12TFNF V1.0, 2025/05 Features Electrical Features  Low QG  Low VCE,sat  Tj,op = 150°C  Low Inductance Design  Bl

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PSC20120J 1200 V, 20 A SiC Schottky diode in D2PAK R2P 30 April 2025 Product data sheet 1. General description Nexperia introduces leading edge Si

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S3M0025120B Technical Data Data Sheet N2840, REV.- S3M0025120B 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 73 A RDS(on) = 25 mΩ Circuit Diagram

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1P2o0w0VerSMICodEuDl3e ADPR35B12CSNT PRELIMINARY DATASHEET V0.1, 2022/12 Electrical Features  Low RDS(on)  Tj ,op = 150°C  Blocking voltage 1200V

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UNISONIC TECHNOLOGIES CO., LTD USC120R040B 57A, 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET  DESCRIPTION SiC The material can ach

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1P2o0w0VerSMICodEuDl3e ADPR30B12CSNT PRELIMINARY DATASHEET V0.1, 2022/12 Electrical Features  Low RDS(on)  Tj ,op = 150°C  Blocking voltage 1200V

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1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

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+0 1 )7 Part No.：HM40N120FT Package：TO-247-3L Features:  Low switching power loss  Low switching surge and noise  Advanced Field Stop trench

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KWNFP75R12NS3 1200V 75A PIM IGBT NTC ， (VCE=2.0V) (Eoff=5.1mJ) (>10us) IGBT()（，T C=25℃） - V CES 1200 - V GES ±20 IC T C=25℃ T C

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DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−inte

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LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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MITSUBISHI SEMICONDUCTORS M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driv

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http://www.fujielectric.com/products/semiconductor/ 2MBI1200VG-170E IGBT MODULE (V series) 1700V / 1200A / 2 in one package Features High speed swi

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X.PAK NSF017120T2A0 1200 V, 17 mΩ, N-channel SiC MOSFET 9 April 2025 Product data sheet 1. General description The NSF017120T2A0 is a Silicon Carbi

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RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has

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LUH100G1201 LUH100G1201Z*(1) Features • Soft Punch Through - Low Loss (SPT+) Technology SUSPM™ 1200V 100A 2-Pack IGBT Module Preliminary data • • •

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