1200V Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−inte

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LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

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MITSUBISHI SEMICONDUCTORS M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driv

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X.PAK NSF017120T2A0 1200 V, 17 mΩ, N-channel SiC MOSFET 9 April 2025 Product data sheet 1. General description The NSF017120T2A0 is a Silicon Carbi

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 VCES = IC110 = VCE(sat)  tfi(typ) = 1

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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LUH100G1201 LUH100G1201Z*(1) Features • Soft Punch Through - Low Loss (SPT+) Technology SUSPM™ 1200V 100A 2-Pack IGBT Module Preliminary data • • •

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V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s

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X.PAK NSF030120T2A0 1200 V, 30 mΩ, N-channel SiC MOSFET 24 March 2025 Product data sheet 1. General description The NSF030120T2A0 is a Silicon Carb

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IKY100N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft

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V X / Mob:15919711751 ASC60N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

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TO-247-4L NSF040120L4A1 1200 V, 40 mΩ, N-channel SiC MOSFET 21 January 2025 Product data sheet 1. General description The NSF040120L4A1 is a Silico

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HD60SB60 thru HD60SB120 60A,600V-1200V 60A,600V-1200V Single Phase Glass Passivated Bridge Rectifier ■ Features  Glass passivated chip  Low reve

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IMZ120R140M1H IMZ120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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TO-263-7 NSF030120D7A0-Q 1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications 30 April 2025 Product data sheet 1. General description

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FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6

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DATA SHEET www.onsemi.com ASPM34 Series Automotive 3-Phase 1200 V 50 A IGBT Intelligent Power Module NFVA25012NP2T General Description NFVA25012NP2T

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www.vishay.com MXP120A045FW Vishay MaxPower Semiconductor MaxSiCTM 1200 V N-Channel SiC MOSFET D TO-247 3L S D G Marking Code: 120A045FW G S N-Ch

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