HGT1S2N120CNDS
features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49311.
Features
- 13A, 1200V, TC = 25o C
- 1200V Switching SOA Capability
- Typical Fall Time-
- - . 360ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Thermal Impedance SPICE Model Temperature pensating SABER™ Model .intersil.
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
Ordering Information
PART NUMBER...
