HGT1S2N120BNDS Datasheet | Intersil

features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49310. Features - 12A, 1200V, TC = 25o C - 1200V Switching SOA Capability - Typical Fall Time- - - . 160ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss - Thermal Impedance SPICE Model .intersil. - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Packaging JEDEC TO-220AB (ALTERNATE VERSION) Ordering Information PART NUMBER HGTP2N120BND HGT1S2N120BNDS PACKAGE TO-220AB TO-263AB BRAND 2N120BND 2N120BND COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120BNDS9A. Symbol JEDEC TO-263AB COLLECTOR (FLANGE) G G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP2N120BND, HGT1S2N120BNDS Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified HGTP2N120BND...