HGT1S2N120BNS
features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49312.
Features
- 12A, 1200V, TC = 25o C
- 1200V Switching SOA Capability
- Typical Fall Time-
- - . 160ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Avalanche Rated
- Thermal Impedance SPICE Model Temperature pensating SABER™ Model .intersil.
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Ordering Information
PART NUMBER HGTP2N120BN HGTD2N120BNS HGT1S2N120BNS PACKAGE TO-220AB TO-252AA TO-263AB BRAND 2N120BN 2N120BN 2N120BN
Packaging
JEDEC TO-220AB
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