ZXMN6A09G 60V N-CHANNEL MOSFET

DIODES

Description

ZXMN6A09G Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) 0.04Ω @ VGS = 10V 0.06Ω @ VGS = 4.5V ID TA = +25°C 7.5A 6..
This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high.

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Datasheet Specifications

Part number: ZXMN6A09G
Manufacturer: DIODES ↗
File Size: 943.26 KB
Datasheet: ZXMN6A09G-DIODES.pdf
Description: 60V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Voltage
* Low On-Resistance
* Fast Switching Speed
* Low Gate Drive
* Low Threshold
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automo

Applications

* Applications
* DC-DC converters
* Power management functions
* Disconnect switches

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ZXMN6A09G 60V N-CHANNEL MOSFET DIODES

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