ZXMN6A09G
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60v n-channel mosfet. This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making
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ZXMN6A09DN8 - 60V SO8 N-channel MOSFET
(Zetex Semiconductors)
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60
RDS(on) (⍀) 0.040 @ VGS= 10V 0.060 @ VGS= 4.5V
ID (A) 5.6 4.6
Descripti.
ZXMN6A09G - 60V N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A09G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.045 DESCRIPTION
ID= 5.1A
This new generation of TRENCH MOSFETs fr.
ZXMN6A09GQ - 60V N-CHANNEL MOSFET
(DIODES)
Green
ZXMN6A09GQ
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) 0.04Ω @ VGS = 10V 0.06Ω @ VGS = 4.5V
ID TA = +25°C
7.5A.
ZXMN6A09K - N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK
Summary
V(BR)DSS=60V : RDS(on)=0.040⍀; ID=12.2A
Description
This new generation of trench MOS.
ZXMN6A09K - 60V N-CHANNEL MOSFET
(DIODES)
Green
ZXMN6A09K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
Max RDS(on)
40mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V
Max ID TA = +25°C.
ZXMN6A07F - 60V N-CHANNEL MOSFET
(Diodes)
ZXMN6A07F
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
Max RDS(ON)
250mΩ @ VGS = 10V 350mΩ @ VGS = 4.5V
Max ID TA = +25°C
(Note.
ZXMN6A07Z - 60V N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A07Z
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4
ID= 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs fro.
ZXMN6A07ZTA - N-Channel MOSFET
(VBsemi)
ZXMN6A07ZTA
.VBsemi.
ZXMN6A07ZTA N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.076 at VGS = 10 V 60
0.088 at VGS = 4.5.
ZXMN6A08E6 - 60V N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A08E6
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.100
ID= 3.0A
DESCRIPTION
This new generation of TRENCH MOSFETs f.
ZXMN6A08E6 - 60V N-Channel MOSFET
(DIODES)
ADVANCE INFORMATION
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Product Summary
V(BR)DSS 60V
RDS(ON)
80mΩ @ VGS=10V 150mΩ @ VGS=4.5V
ID TA = +25°C
3.5A 2.5A
Description
This MOSFET is de.