ZXMN6A08E6 60V N-Channel MOSFET

DIODES

Description

ADVANCE INFORMATION YM Product Summary V(BR)DSS 60V RDS(ON) 80mΩ @ VGS=10V 150mΩ @ VGS=4.5V ID TA = +25°C 3.5A 2.5A .
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power.

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Datasheet Specifications

Part number: ZXMN6A08E6
Manufacturer: DIODES ↗
File Size: 568.06 KB
Datasheet: ZXMN6A08E6-DIODES.pdf
Description: 60V N-Channel MOSFET

Features

* Low On-Resistance
* Fast Switching Speed
* Low Gate Drive
* Low Threshold
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
* Case: SOT

Applications

* Applications
* DC-DC Converters
* Power Management Functions
* Disconnect Switches

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ZXMN6A08E6 60V N-Channel MOSFET DIODES

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