NPT Datasheet | Specifications & PDF Download

FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V C G G C miniBLOC, SOT-

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NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications 

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SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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M2001 Series 5x7 mm, 3.3 Volt, CMOS/LVPECL/LVDS, Clock Oscillator • • Low cost oscillator series with jitter performance optimized specifically for

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FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad

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Naina Semiconductor Ltd. Press Fit Triac ½”, 15 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temper

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NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features 

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad

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Naina Semiconductor Ltd. Press Fit Triac ½”, 25 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temper

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1200V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig

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www.DataSheet4U.com M5004 Series 9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPVCXO • Ideal for applications requiring long term (20 year) all-inc

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FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6

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NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for

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1200V, 15A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z Hig

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Features: • 1000V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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