G60N100 (Fairchild Semiconductor)
NPT IGBT
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching • Low Saturation Voltage: VCE
(61 views)
TGA25N120ND (TRinno)
NPT trench IGBT
Features:
• 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro
(41 views)
NPT25100 (MACOM)
28V GaN Power Amplifier
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz
Features
• GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad
(38 views)
IXEN60N120D1 (IXYS Corporation)
NPT3 IGBT in miniBLOC package
IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com
NPT3 IGBT
in miniBLOC package
IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V
C G G C
miniBLOC, SOT-
(35 views)
FGA25N120 (ON Semiconductor)
NPT Trench IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Co
(33 views)
M2001 (MTRONPTI)
Clock Oscillator
M2001 Series
5x7 mm, 3.3 Volt, CMOS/LVPECL/LVDS, Clock Oscillator
• •
Low cost oscillator series with jitter performance optimized specifically for
(32 views)
NPT2021 (MA-COM)
GaN Wideband Transistor
NPT2021
GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications
(32 views)
NPT25100P (MACOM)
28V GaN Power Amplifier
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz
Features
• GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad
(32 views)
NPT15 (Naina Semiconductor)
Press Fit Triac
Naina Semiconductor Ltd.
Press Fit Triac ½”, 15 Amps
Features
• Improved glass passivation for high reliability • Exceptional stability at high temper
(31 views)
NPT2019 (Nitronex)
GaN HEMT
NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
(31 views)
NPT25100B (MACOM)
28V GaN Power Amplifier
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz
Features
• GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad
(31 views)
www.DataSheet4U.com
XO3050 Series
1.5x1.5 inch, 5.0 & 10.0 Volt, TTL/HCMOS/Sinewave, TCXO
• • VCXO version available Tight stability and low phase n
(29 views)
M5004 (MTRONPTI)
CMOS/TTL/PECL/LVDS
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M5004 Series
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPVCXO
•
Ideal for applications requiring long term (20 year) all-inc
(29 views)
K07N120 (Infineon Technologies)
Fast IGBT in NPT-technology
SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eoff compared to previous genera
(29 views)
FGA25N120ANTDTU-F109 (ON Semiconductor)
NPT Trench IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Co
(29 views)
PGW25GD120 (Wing On)
Trench NPT IGBT
1200V, 25A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig
(28 views)
MTCO21 (MTRONPTI)
(MTCO11 / MTCO21) Clipped Sinewave
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MTCO11/21 Series
13.1 x 11.7 mm, 3.0 or 5.0 Volt, Clipped Sinewave, TCXO
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(28 views)
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M4003 & M4004 Series
9x14 mm, 5.0 or 3.3 Volt, PECL, VCSO
• •
Integrated phase jitter of less than 0.5 ps from 12 kHz to 20 MH
(28 views)
M5003 (MTRONPTI)
CMOS/TTL/PECL/LVDS
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M5003 Series
9x16 mm FR-4, 3.3 Volt, CMOS/TTL/PECL/LVDS, HPVCXO
•
Ideal for applications requiring long term (20 year) all-inc
(28 views)
KGH25N120NDA (KEC)
NPT IGBTs
SEMICONDUCTOR
TECHNICAL DATA
KGH25N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a
(28 views)