* Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF
* Kelvin emitter for easy drive
* Very low stray inductance - S
APTGU40TDU120P Datasheet (342.98 KB)
APTGU40TDU120P
Advanced Power Technology
342.98 KB
Triple dual common source.
APTGU40TDU120P www.DataSheet4U.com Triple Dual Common Source PT IGBT Power Module C1 C3 C5 VCES = 1200V IC = 40A @ Tc = 80°C Application .
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