* 3:1 VSWR AT RATED CONDITIONS
* HERMETIC STRIPAC® PACKAGE
* POUT = 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at an
MSC4003
Advanced Power Technology
185.51 KB
Rf and microwave transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APP.
📁 Related Datasheet
MSC4000 - RF AND MICROWAVE TRANSISTORS
(Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APP.
MSC4001 - RF AND MICROWAVE TRANSISTORS
(Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APP.
MSC400SMA330B4 - SiC N-Channel Power MOSFET
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MSC400SMA330B4
3300 V, 400 mΩ SiC N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases.
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MSC4953W - Dual P-Channel MOSFET
(MORESEMI)
MSC4953W
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ.
MSC4963W - Dual P-Channel Enhancement Mode Power MOS FET
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MSC4963W
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ .
MSC49N02X - 40V N-Channel MOSFETs
(Bruckewell)
MSC49N02X
40V N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv.
MSC49N60X - 40V N-Channel MOSFETs
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MSC49N60X
40V N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv.
