* The following are key features of the MSC400SMA330B4 device:
* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 150 °C
* Fast and reliable body diode
MSC400SMA330B4 Datasheet (5.07 MB)
MSC400SMA330B4
5.07 MB
Sic n-channel power mosfet.
MSC400SMA330B4
3300 V, 400 mΩ SiC N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases.
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