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MSC010SDA070S - Zero Recovery Silicon Carbide Schottky Diode

Key Features

  • The following are key features of the MSC010SDA070S device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant Benefits The following are benefits of the MSC010SDA070S device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Full PDF Text Transcription for MSC010SDA070S (Reference)

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MSC010SDA070S Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi incre...

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) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070S device is a 700 V, 10 A SiC SBD in a TO-268 (D3PAK) package.

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