* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior avalanche ruggedness
* RoHS compliant Be
MSC015SMA070B4 Datasheet (5.11 MB)
MSC015SMA070B4
5.11 MB
N-channel mosfet.
700V, 15 mΩ N-Channel mSiC™ MOSFET
MSC015SMA070B4
Product Overview
700V, 15 mΩ typical at 20 VGS, 18 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Cha.
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