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MSC015SMA070B - Silicon Carbide N-Channel Power MOSFET

Datasheet Summary

Features

  • The following are key features of the MSC015SMA070B device:.
  • Low capacitances and low gate charge.
  • Fast switching speed due to low internal gate resistance (ESR).
  • Stable operation at high junction temperature, TJ(max) = 175 °C.
  • Fast and reliable body diode.
  • Superior avalanche ruggedness.
  • RoHS compliant Benefits The following are benefits of the MSC015SMA070B device:.
  • High efficiency to enable lighter, more compact system.
  • Si.

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Datasheet Details

Part number MSC015SMA070B
Manufacturer Microsemi
File Size 2.86 MB
Description Silicon Carbide N-Channel Power MOSFET
Datasheet download datasheet MSC015SMA070B Datasheet
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MSC015SMA070B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package.
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