* AEC-Q101 qualified option available
* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior av
MSC025SMA120B Datasheet (5.26 MB)
MSC025SMA120B
5.26 MB
N-channel mosfet.
1200V, 25 mΩ N-Channel mSiC™ MOSFET
MSC025SMA120B
Product Overview
1200V, 25 mΩ typical at VGS = 20V, 28 mΩ typical at VGS = 18V, Silicon Carbide (Si.
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