MSC0207W
MORESEMI
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Dual p-channel mosfet.
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MSC0207GE - Dual N-Channel MOSFET
(MORESEMI)
MSC0207GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=.
MSC0207SE - Dual N-Channel MOSFET
(MORESEMI)
MSC0207SE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=.
MSC0203S - N/P-Channel Power MOSFET
(MORESEMI)
MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
VDS = 20V,ID = 3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VG.
MSC0205W - Dual N-Channel MOSFET
(MORESEMI)
MSC0205W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.
MSC0206SE - Dual N-Channel MOSFET
(MORESEMI)
MSC0206SE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=.
MSC0206W - Dual N-Channel MOSFET
(MORESEMI)
MSC0206W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.
MSC020SDA120B - Zero Recovery Silicon Carbide Schottky Diode
(Microsemi)
MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line .
MSC0211GE - Dual N-Channel MOSFET
(MORESEMI)
MSC0211GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.
MSC025SMA120B - N-Channel MOSFET
(Microchip)
1200V, 25 mΩ N-Channel mSiC™ MOSFET
MSC025SMA120B
Product Overview
1200V, 25 mΩ typical at VGS = 20V, 28 mΩ typical at VGS = 18V, Silicon Carbide (Si.
MSC010SDA070B - Zero Recovery Silicon Carbide Schottky Diode
(Microchip)
MSC010SDA070B
Zero Recovery Silicon Carbide Schottky Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line .