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1N5283

SILICON CURRENT REGULATOR DIODE

1N5283 Features

* INCLUDE:

* IP = 220 µA Nominal

* ZT = 25.0 MΩ Minimum

* Hermetic DO-7 Package MAXIMUM RATINGS POV 100 V PDISS 600 mW @ TC = 75 °C TJ -55 °C to +200 °C TSTG -55 °C to +200 °C θJC 210 °C/W PACKAGE STYLE DO-7 CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS IP VT =

1N5283 Datasheet (11.81 KB)

Preview of 1N5283 PDF

Datasheet Details

Part number:

1N5283

Manufacturer:

Advanced Semiconductor

File Size:

11.81 KB

Description:

Silicon current regulator diode.

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TAGS

1N5283 SILICON CURRENT REGULATOR DIODE Advanced Semiconductor

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